NickelMaghrebV1, France, Analysis, bibRecord, 000367

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

Identifieur interne : 000367 ( France/Analysis ); précédent : 000366; suivant : 000368

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

Auteurs : N. M'Gafad [Maroc] ; H. Amzil [Maroc] ; D. Sayah [Maroc] ; D. Ballutaud [France] ; M. Barbé [France]

Source :

Solid State Electronics [ 0038-1101 ] ; 1999.

RBID : ISTEX:DB751D511F33990392B13175D4D68293DCEB3CD4

Abstract

The electrical activity of grain boundaries in multicrystalline silicon has been investigated using electron beam induced current (EBIC) contrast imaging and potential barrier height and interface state density calculation from I–V and C–V measurements. It is shown that 1 μm evaporated aluminum layer deposited on the back surface of a silicon sample, followed by annealing at 850°C for 30 min, reduces the electrical activity of grain boundaries: the interface states density and the EBIC contrast associated with the recombination at grain boundaries decrease. It is also established that the efficiency of aluminum passivation depends on the cooling rate after the diffusion of aluminum at 850°C. The gettering mechanism is discussed.

Url:

https://api.istex.fr/document/DB751D511F33990392B13175D4D68293DCEB3CD4/fulltext/pdf

DOI: 10.1016/S0038-1101(99)00011-8

Affiliations:

Links toward previous steps (curation, corpus...)

to stream Istex, to step Corpus: 000A49
to stream Istex, to step Curation: 000686
to stream Istex, to step Checkpoint: 000610
to stream Main, to step Merge: 000C24
to stream Main, to step Curation: 000B89
to stream Main, to step Exploration: 000B89
to stream France, to step Extraction: 000367

Links to Exploration step

ISTEX:DB751D511F33990392B13175D4D68293DCEB3CD4

Le document en format XML

<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency</title>
<author><name sortKey="M Gafad, N" sort="M Gafad, N" uniqKey="M Gafad N" first="N." last="M'Gafad">N. M'Gafad</name>
</author>
<author><name sortKey="Amzil, H" sort="Amzil, H" uniqKey="Amzil H" first="H." last="Amzil">H. Amzil</name>
</author>
<author><name sortKey="Sayah, D" sort="Sayah, D" uniqKey="Sayah D" first="D." last="Sayah">D. Sayah</name>
</author>
<author><name sortKey="Ballutaud, D" sort="Ballutaud, D" uniqKey="Ballutaud D" first="D." last="Ballutaud">D. Ballutaud</name>
</author>
<author><name sortKey="Barbe, M" sort="Barbe, M" uniqKey="Barbe M" first="M." last="Barbé">M. Barbé</name>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">ISTEX</idno>
<idno type="RBID">ISTEX:DB751D511F33990392B13175D4D68293DCEB3CD4</idno>
<date when="1999" year="1999">1999</date>
<idno type="doi">10.1016/S0038-1101(99)00011-8</idno>
<idno type="url">https://api.istex.fr/document/DB751D511F33990392B13175D4D68293DCEB3CD4/fulltext/pdf</idno>
<idno type="wicri:Area/Istex/Corpus">000A49</idno>
<idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000A49</idno>
<idno type="wicri:Area/Istex/Curation">000686</idno>
<idno type="wicri:Area/Istex/Checkpoint">000610</idno>
<idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Checkpoint">000610</idno>
<idno type="wicri:doubleKey">0038-1101:1999:M Gafad N:passivation:of:the</idno>
<idno type="wicri:Area/Main/Merge">000C24</idno>
<idno type="wicri:Area/Main/Curation">000B89</idno>
<idno type="wicri:Area/Main/Exploration">000B89</idno>
<idno type="wicri:Area/France/Extraction">000367</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title level="a">Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency</title>
<author><name sortKey="M Gafad, N" sort="M Gafad, N" uniqKey="M Gafad N" first="N." last="M'Gafad">N. M'Gafad</name>
<affiliation wicri:level="3"><country xml:lang="fr">Maroc</country>
<wicri:regionArea>LPSES, Ecole Normale supérieure Takaddoum, Rabat</wicri:regionArea>
<placeName><settlement type="city">Rabat</settlement>
<region nuts="2">Rabat-Salé-Kénitra</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Amzil, H" sort="Amzil, H" uniqKey="Amzil H" first="H." last="Amzil">H. Amzil</name>
<affiliation wicri:level="3"><country xml:lang="fr">Maroc</country>
<wicri:regionArea>LPSES, Ecole Normale supérieure Takaddoum, Rabat</wicri:regionArea>
<placeName><settlement type="city">Rabat</settlement>
<region nuts="2">Rabat-Salé-Kénitra</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sayah, D" sort="Sayah, D" uniqKey="Sayah D" first="D." last="Sayah">D. Sayah</name>
<affiliation wicri:level="3"><country xml:lang="fr">Maroc</country>
<wicri:regionArea>LPS, Faculté des Science, Rabat</wicri:regionArea>
<placeName><settlement type="city">Rabat</settlement>
<region nuts="2">Rabat-Salé-Kénitra</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ballutaud, D" sort="Ballutaud, D" uniqKey="Ballutaud D" first="D." last="Ballutaud">D. Ballutaud</name>
<affiliation wicri:level="3"><country xml:lang="fr">France</country>
<wicri:regionArea>LPSB-CNRS, 1, place Aristide Briand, 92195 Meudon cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Meudon</settlement>
</placeName>
</affiliation>
<affiliation></affiliation>
<affiliation wicri:level="1"><country wicri:rule="url">France</country>
</affiliation>
</author>
<author><name sortKey="Barbe, M" sort="Barbe, M" uniqKey="Barbe M" first="M." last="Barbé">M. Barbé</name>
<affiliation wicri:level="3"><country xml:lang="fr">France</country>
<wicri:regionArea>LPSB-CNRS, 1, place Aristide Briand, 92195 Meudon cedex</wicri:regionArea>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Meudon</settlement>
</placeName>
</affiliation>
</author>
</analytic>
<monogr></monogr>
<series><title level="j">Solid State Electronics</title>
<title level="j" type="abbrev">SSE</title>
<idno type="ISSN">0038-1101</idno>
<imprint><publisher>ELSEVIER</publisher>
<date type="published" when="1999">1999</date>
<biblScope unit="volume">43</biblScope>
<biblScope unit="issue">5</biblScope>
<biblScope unit="page" from="857">857</biblScope>
<biblScope unit="page" to="864">864</biblScope>
</imprint>
<idno type="ISSN">0038-1101</idno>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><idno type="ISSN">0038-1101</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass></textClass>
<langUsage><language ident="en">en</language>
</langUsage>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The electrical activity of grain boundaries in multicrystalline silicon has been investigated using electron beam induced current (EBIC) contrast imaging and potential barrier height and interface state density calculation from I–V and C–V measurements. It is shown that 1 μm evaporated aluminum layer deposited on the back surface of a silicon sample, followed by annealing at 850°C for 30 min, reduces the electrical activity of grain boundaries: the interface states density and the EBIC contrast associated with the recombination at grain boundaries decrease. It is also established that the efficiency of aluminum passivation depends on the cooling rate after the diffusion of aluminum at 850°C. The gettering mechanism is discussed.</div>
</front>
</TEI>
<affiliations><list><country><li>France</li>
<li>Maroc</li>
</country>
<region><li>Rabat-Salé-Kénitra</li>
<li>Île-de-France</li>
</region>
<settlement><li>Meudon</li>
<li>Rabat</li>
</settlement>
</list>
<tree><country name="Maroc"><region name="Rabat-Salé-Kénitra"><name sortKey="M Gafad, N" sort="M Gafad, N" uniqKey="M Gafad N" first="N." last="M'Gafad">N. M'Gafad</name>
</region>
<name sortKey="Amzil, H" sort="Amzil, H" uniqKey="Amzil H" first="H." last="Amzil">H. Amzil</name>
<name sortKey="Sayah, D" sort="Sayah, D" uniqKey="Sayah D" first="D." last="Sayah">D. Sayah</name>
</country>
<country name="France"><region name="Île-de-France"><name sortKey="Ballutaud, D" sort="Ballutaud, D" uniqKey="Ballutaud D" first="D." last="Ballutaud">D. Ballutaud</name>
</region>
<name sortKey="Ballutaud, D" sort="Ballutaud, D" uniqKey="Ballutaud D" first="D." last="Ballutaud">D. Ballutaud</name>
<name sortKey="Barbe, M" sort="Barbe, M" uniqKey="Barbe M" first="M." last="Barbé">M. Barbé</name>
</country>
</tree>
</affiliations>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=$WICRI_ROOT/Wicri/Terre/explor/NickelMaghrebV1/Data/France/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000367 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 000367 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=    Wicri/Terre
   |area=    NickelMaghrebV1
   |flux=    France
   |étape=   Analysis
   |type=    RBID
   |clé=     ISTEX:DB751D511F33990392B13175D4D68293DCEB3CD4
   |texte=   Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency
}}

This area was generated with Dilib version V0.6.27.
Data generation: Fri Mar 24 23:14:20 2017. Site generation: Tue Mar 5 17:03:47 2024

	Serveur d'exploration sur le nickel au Maghreb
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur le nickel au Maghreb

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

Passivation of the grain boundary electrical activity in multicrystalline silicon: aluminum treatment efficiency

Source :

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri